Method of fabricating microelectronic devices

ABSTRACT

Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. An embodiment of one such method includes forming a plurality of through holes in a substrate with the through holes arranged in arrays, and attaching a plurality of singulated microelectronic dies to the substrate with an active side of the individual dies facing toward the substrate and with a plurality of terminals on the active side of the individual dies aligned with corresponding holes in the substrate. The singulated dies are attached to the substrate after forming the holes in the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims foreign priority benefits of SingaporeApplication No. 200605271-6 filed Aug. 4, 2006, which is incorporatedherein by reference in its entirety.

TECHNICAL FIELD

The present invention is related to microelectronic devices and methodsfor manufacturing microelectronic devices.

BACKGROUND

Microelectronic devices generally have a die (i.e., a chip) thatincludes integrated circuitry having a high density of very smallcomponents. In a typical process, a large number of dies aremanufactured on a single wafer using many different processes that maybe repeated at various stages (e.g., implanting, doping,photolithography, chemical vapor deposition, plasma vapor deposition,plating, planarizing, etching, etc.). The dies include an array of verysmall bond-pads electrically coupled to the integrated circuitry. Thebond-pads are the external electrical contacts on the die through whichthe supply voltage, signals, etc., are transmitted to and from theintegrated circuitry. After forming the dies, the wafer is thinned bybackgrinding, and then the dies are separated from one another (i.e.,singulated) by dicing the wafer. Next, the dies are typically “packaged”to connect the bond-pads to a larger array of electrical terminals thatcan be more easily coupled to the various power supply lines, signallines, and ground lines.

Conventional die-level packaging processes include (a) attachingindividual dies to an interposer substrate, (b) wire-bonding thebond-pads of the dies to the terminals of the interposer substrate, and(c) encapsulating the dies with a molding compound. Die-level packaging,however, has several drawbacks. First, it is time consuming andexpensive to mount individual dies to interposer substrates or leadframes. Second, as the demand for higher pin counts and smaller packagesincreases, it becomes more difficult to form robust wire-bonds that canwithstand the forces involved in molding processes. Third, the handlingprocesses for attaching individual dies to interposer substrates or leadframes may damage bare dies.

Another process for packaging microelectronic devices is wafer-levelpackaging. In wafer-level packaging, a plurality of microelectronic diesare formed on a wafer, and then a redistribution layer is formed overthe dies. The redistribution layer has a dielectric layer, a pluralityof ball-pad arrays on the dielectric layer, and a plurality ofconductive traces in the dielectric layer. Each ball-pad array isarranged over a corresponding die, and the ball-pads in each array arecoupled to corresponding bond-pads of the die with the conductivetraces. The conductive traces are typically constructed by laserdrilling holes in the dielectric layer to expose the bond-pads on thedies, and then depositing conductive material into the holes. Afterforming the redistribution layer on the wafer, a highly accuratestenciling machine deposits discrete masses of solder paste onto theindividual ball-pads. The solder paste is then reflowed to form smallsolder balls or “solder bumps” on the ball-pads. After forming thesolder balls, the wafer is singulated to separate the individualmicroelectronic devices from one another. The individual microelectronicdevices are subsequently attached to a substrate such as a printedcircuit board. Microelectronic devices packaged at the wafer-level canhave high pin counts in a small area, but they are not as robust asdevices packaged at the die-level.

Packaged microelectronic devices can also be constructed by “build-up”packaging. For example, a sacrificial substrate can be attached to apanel that includes a plurality of microelectronic dies and an organicfiller that couples the dies together. The sacrificial substrate isgenerally a ceramic disc that is attached to the active sides of thedies. Next, the back sides of the dies are thinned and a ceramic layeris attached to the back sides. The sacrificial substrate is then removedfrom the active sides of the dies and build-up layers or aredistribution layer is formed on the active sides of the dies. Packageddevices using a build-up approach on a sacrificial substrate providehigh pin counts in a small area and a reasonably robust structure.

The build-up packaging process described above and conventionalwafer-level packaging processes, however, have several drawbacks. First,laser drilling holes in the redistribution layer to expose the bond-padscan damage the bond-pads and/or other components on the active side ofthe dies. Second, because the dielectric layer covers the active side ofthe dies, it is difficult to properly align the laser beam with thebond-pads. Thus, laser drilling requires an expensive alignment tool toensure that the holes are aligned with the bond-pads. Third, thebond-pads must be cleaned (e.g., desmeared) to remove residue and otherdebris after laser drilling the holes. Desmearing processes increase thecosts of production and reduce throughput. Accordingly, there is a needto enhance the efficiency and reliability of packaging microelectronicdevices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1E illustrate stages in one embodiment of a method formanufacturing a plurality of microelectronic devices.

FIG. 1A is a schematic side cross-sectional view of a substrate for usein constructing the microelectronic devices.

FIG. 1B is a schematic side cross-sectional view of a microelectronicdevice assembly including the substrate and a plurality of singulateddies arranged in an array on the substrate.

FIG. 1C is a schematic side cross-sectional view of the microelectronicdevice assembly after depositing a third conductive layer onto thesecond conductive layer.

FIG. 1D is a schematic side cross-sectional view of the microelectronicdevice assembly after depositing a second dielectric layer onto theconductive lines and the first dielectric layer.

FIG. 1E is a schematic side cross-sectional view of the microelectronicdevice assembly after encasing a portion of the dies.

FIGS. 2A and 2B illustrate stages in another embodiment of a method formanufacturing microelectronic devices.

FIG. 2A is a schematic side cross-sectional view of a substrate and anadhesive layer on the substrate.

FIG. 2B is a schematic side cross-sectional view of a microelectronicdevice assembly.

FIGS. 3A and 3B illustrate stages in another embodiment of a method formanufacturing microelectronic devices.

FIG. 3A is a schematic side cross-sectional view of a substrate and anadhesive layer on the substrate.

FIG. 3B is a schematic side cross-sectional view of a microelectronicdevice assembly.

DETAILED DESCRIPTION

A. Overview

The following disclosure describes several embodiments ofmicroelectronic devices and methods for manufacturing microelectronicdevices. An embodiment of one such method includes (a) providing asubstrate having a dielectric layer and a plurality of through holesarranged in arrays, and (b) attaching a plurality of singulatedmicroelectronic dies to the substrate with an active side of theindividual dies facing toward the substrate and with a plurality ofterminals on the active side of the individual dies aligned withcorresponding holes in the substrate. The singulated dies are attachedto the substrate after forming the holes in the substrate.

In another embodiment, a method includes providing a plurality ofsingulated microelectronic dies and a substrate with a plurality ofholes arranged in arrays. The individual dies include an active side anda plurality of terminals at the active side. The method further includes(a) coupling the active sides of the singulated dies to the substratesuch that the terminals are aligned with corresponding holes, and (b)forming a redistribution structure at the substrate. The redistributionstructure includes a plurality of contacts electrically coupled tocorresponding terminals on the dies.

In another embodiment, a method includes attaching a plurality ofsingulated microelectronic dies to a partially cured substrate with anactive side of the individual dies facing toward the substrate. Thepartially cured substrate has a plurality of through apertures, and theindividual dies further include a plurality of terminals aligned withcorresponding apertures. The method further includes curing thesubstrate after attaching the singulated dies and constructing aredistribution structure at the substrate. The redistribution structureincludes a plurality of conductive lines electrically coupled tocorresponding terminals on the dies.

Another aspect of the invention is directed to a microelectronic deviceassembly. In one embodiment, a microelectronic device assembly includesa substrate having a plurality of holes arranged in arrays and aplurality of singulated microelectronic dies attached to the substrate.The individual dies include an active side facing toward the substrate,a plurality of terminals disposed on the active side and aligned withcorresponding holes, a back side opposite the active side, and aplurality of ends extending between the active side and the back side.At least a portion of the individual ends of the dies are exposed.

In another embodiment, a microelectronic device assembly includes apartially cured substrate having a plurality of through holes and aplurality of microelectronic dies attached to the substrate. Theindividual dies include an active side facing toward the substrate, aplurality of terminals disposed on the active side and aligned withcorresponding holes, and an integrated circuit operably coupled to theterminals.

Another aspect of the invention is directed to microelectronic devices.In one embodiment, a microelectronic device includes a preformedsubstrate having a plurality of through holes arranged in an array and amicroelectronic die attached to the substrate. The die includes anactive side facing toward the substrate, a plurality of terminalsdisposed on the active side and aligned with corresponding holes, and anintegrated circuit operably coupled to the terminals.

Specific details of several embodiments of the invention are describedbelow with reference to microelectronic devices includingmicroelectronic dies, but in other embodiments the microelectronicdevices can include other components. For example, the microelectronicdevices can include micromechanical components, data storage elements,optics, read/write components, or other features. The microelectronicdies can be SRAM, DRAM (e.g., DDR-SDRAM), flash-memory (e.g., NANDflash-memory), processors, and other types of devices. Moreover,although the illustrated microelectronic devices are constructed at thewafer level, in additional embodiments the microelectronic devices canbe manufactured at the die level. Also, several other embodiments of theinvention can have different configurations, components, or proceduresthan those described in this section. A person of ordinary skill in theart, therefore, will accordingly understand that the invention may haveother embodiments with additional elements, or the invention may haveother embodiments without several of the elements shown and describedbelow with reference to FIGS. 1A-3B.

B. Embodiments of Methods for Manufacturing Microelectronic Devices

FIGS. 1A-1E illustrate stages in one embodiment of a method formanufacturing a plurality of microelectronic devices. For example, FIG.1A is a schematic side cross-sectional view of a substrate 110 includinga first dielectric layer 112 and a first conductive layer 114 on thedielectric layer 112. The first dielectric layer 112 can include apartially cured material (e.g., B-stage material) for subsequentlyattaching the substrate 110 to a plurality of dies. For example, thefirst dielectric layer 112 can be a resin coated copper (RCC) orpre-preg material with woven fiber cloth embedded in a B-stage resin.The first conductive layer 114 can be a foil (e.g., copper foil) formedon the first dielectric layer 112. Suitable substrates 110 includeProduct No. MCF-6000E manufactured by Hitachi Chemical Co. America, Ltd.of Cupertino, Calif. In other embodiments, such as the embodimentsdescribed below with reference to FIGS. 2A-3B, the substrate may notinclude the first conductive layer, and/or the first dielectric layer112 may include a fully cured material.

The illustrated substrate 110 further includes a first surface 116 atthe first conductive layer 114, a second surface 118 at the firstdielectric layer 112, and a plurality of through holes 120 extendingbetween the first and second surfaces 116 and 118. The holes 120 arearranged in arrays with each array corresponding to an arrangement ofterminals on a die that is subsequently attached to the substrate 110.The individual holes 120 can have a first dimension D₁ at the firstsurface 116 and a second dimension D₂ at the second surface 118. In theillustrated embodiment, the first dimension D₁ is greater than thesecond dimension D₂, but in other embodiments the first dimension D₁ canbe generally equal to or less than the second dimension D₂.

The individual holes 120 include a first portion 122 a in the firstconductive layer 114 and a second portion 122 b in the first dielectriclayer 112. The first and second portions 122 a-b can be formed withdifferent processes. For example, the first portion 122 a can be formedby placing a photoresist on the first surface 116 of the substrate 110,patterning and developing the photoresist, and etching the firstconductive layer 114 to remove selected portions of the layer 114. Thesecond portion 122 b can be formed by laser drilling, punching, etching,or other suitable processes. In additional embodiments, the first andsecond portions 122 a-b of the holes 120 can be formed by the sameprocess.

FIG. 1B is a schematic side cross-sectional view of a microelectronicdevice assembly 100 including the substrate 110 and a plurality ofsingulated dies 130 arranged in an array on the substrate 110. Theindividual dies 130 include an active side 132, a back side 134 oppositethe active side 132, a plurality of ends 135 extending between theactive side 132 and the back side 134, a plurality of terminals 136(e.g., bond-pads) arranged in an array on the active side 132, and anintegrated circuit 138 (shown schematically) operably coupled to theterminals 136. The dies 130 are attached to the substrate 110 with theactive sides 132 facing the second surface 118 and with the terminals136 aligned with corresponding holes 120 such that the terminals 136 andthe holes 120 have a one-to-one correspondence. The individual terminals136 may have a dimension D₃ greater than the second dimension D₂ (FIG.1A) of the holes 120 to facilitate proper alignment. In the illustratedembodiment, the dies 130 are attached to the substrate 110 without anadhesive positioned between the second surface 118 and the active sides132. Rather, the adhesive properties of the partially cured material inthe first dielectric layer 112 enable the dies 130 to remain attached tothe substrate 110. In other embodiments, such as the embodimentsdescribed below with reference to FIGS. 2A-3B, the microelectronicdevice assembly may include an adhesive for attaching the dies 130 tothe substrate 110. Moreover, although the illustrated dies 130 have thesame structure, in other embodiments the dies may have differentfeatures to perform different functions. In another embodiment, themicroelectronic device assembly 100 may include the substrate 110 and aplurality of microelectronic components other than dies. For example, aplurality of capacitors, resistors, inductors, or other devices can beattached to the substrate 110 with the terminals on these devicesaligned with corresponding holes 120 in the substrate 110.

After attaching the dies 130 to the substrate 110, the microelectronicdevice assembly 100 can be heated to fully cure the partially curedmaterial in the dielectric layer 112 and ensure the dies 130 remainconnected to the substrate 110. In other embodiments, such asembodiments in which the dielectric layer 112 does not include apartially cured material, the microelectronic device assembly may not beheated after attaching the dies 130 to the substrate 110. In eithercase, after die attachment, a second conductive layer 140 is depositedonto the substrate 110. Specifically, the second conductive layer 140 isplaced in the holes 120 and over the first surface 116 of the substrate110. The second conductive layer 140 can be formed on the substrate 110by electroless plating, physical vapor deposition, sputtering, or othersuitable processes. In several embodiments, in which the terminals 136do not have a surface compatible with electroless plating, additionalprocesses such as zincation, sputtering, and/or plating may be necessaryto deposit a compatible conductive protective layer (e.g., a nickellayer) on the terminals 136 before depositing the second conductivelayer 140. The conductive protective layer prevents the plating solutionfrom damaging the terminals 136.

FIG. 1C is a schematic side cross-sectional view of the microelectronicdevice assembly 100 after depositing a third conductive layer 142 ontothe second conductive layer 140. The third conductive layer 142 can beformed by depositing a dry film across the second conductive layer 140,patterning the dry film, and electroplating material onto the exposedsections of the second conductive layer 140. In other embodiments, thethird conductive layer 142 can be deposited across the entire secondconductive layer 140, or the second and third conductive layers 140 and142 can be formed as a single layer in one process. In either case,after depositing the third conductive layer 142, sections of the first,second, and/or third conductive layers 114, 140 and/or 142 are removed(e.g., patterned and etched) to form a plurality of conductive lines 144(identified individually as 144 a-d) on the substrate 110. Eachconductive line 144 is electrically coupled to a corresponding terminal136 on a die 130, and the conductive lines 144 are spaced apart fromeach other.

FIG. 1D is a schematic side cross-sectional view of the microelectronicdevice assembly 100 after depositing a second dielectric layer 150 ontothe conductive lines 144 and the first dielectric layer 112. The seconddielectric layer 150 can be a solder mask or other suitable material forprotecting and electrically isolating the conductive lines 144. Afterforming the second dielectric layer 150, portions of the layer 150 areremoved to expose sections of the conductive lines 144 and a pluralityof contacts 146 can be formed on exposed sections of correspondingconductive lines 144. The contacts 146 may be constructed byelectroplating or other suitable processes.

FIG. 1E is a schematic side cross-sectional view of the microelectronicdevice assembly 100 after encasing a portion of the dies 130. Afterforming the contacts 146, an encapsulant 160 is deposited onto thesecond surface 118 of the substrate 110 between adjacent dies 130. Inthe illustrated embodiment, the dies 130 have a first thickness T₁, andthe encapsulant 160 has a second thickness T₂ at least approximatelyequal to the first thickness T₁. As a result, the illustratedencapsulant 160 encases the ends 135 of the dies 130. In otherembodiments, the second thickness T₂ of the encapsulant 160 can be lessthan or greater than the first thickness T₁ of the dies 130. Forexample, the encapsulant may also encase the back sides 134 of the dies130.

After encasing at least a portion of the individual dies 130, aplurality of electrical couplers 152 (e.g., solder balls) are formed oncorresponding contacts 146. The electrical couplers 152 are electricallyconnected to corresponding terminals 136 on the dies 130, and thus theelectrical couplers 152, the contacts 146, and the conductive lines 144form a redistribution structure on the dies 130. In other embodiments,the microelectronic device assembly 100 may not include the electricalcouplers 152, but rather wire-bonds can be attached to the contacts 146.In either case, the microelectronic device assembly 100 is cut alonglines A-A to singulate a plurality of individual microelectronic devices102 (identified individually as 102 a-b).

One feature of the embodiment of the method illustrated above withreference to FIGS. 1A-1E is that the through holes 120 are formed in thesubstrate 110 before the dies 130 are attached to the substrate 110.This feature has several advantages. First, the laser drilling,punching, or other process for forming the holes 120 in the substrate110 does not damage the terminals 136 or other components on the activesides 132 of the dies 130 because the substrate 110 is detached from thedies 130 when the holes 120 are formed. As a result, the illustratedmethod is expected to increase the yield of the microelectronic devices102. Second, the microelectronic device assembly 100 does not requiredesmearing to remove residue and other debris from the terminals 136 onthe dies 130 after forming the holes 120. Accordingly, the illustratedmethod reduces the number of processes required to construct themicroelectronic devices 102 and increases the throughput. Third, thepreformed holes 120 in the substrate 110 facilitate proper alignment ofthe dies 130 on the substrate 110 because the terminals 136 are visiblethrough the holes 120. Thus, the illustrated method may not requireexpensive alignment tools to ensure that the holes 120 are properlyaligned with the terminals 136.

Another feature of the embodiment of the method illustrated above withreference to FIGS. 1A-1E is that the dies 130 can be known good dies. Anadvantage of this feature is that defective dies can be excluded fromthe microelectronic device assembly 100. This increases the yield of themicroelectronic devices 102 and reduces the number of devices 102 thatmalfunction and/or include defects.

C. Additional Embodiments of Methods for Manufacturing MicroelectronicDevices

FIGS. 2A and 2B illustrate stages in another embodiment of a method formanufacturing microelectronic devices. For example, FIG. 2A is aschematic side cross-sectional view of a substrate 210 and an adhesivelayer 224 on the substrate 210. The illustrated substrate 210 isgenerally similar to the substrate 110 described above with reference toFIG. 1A. For example, the substrate 210 includes a first dielectriclayer 212, a first surface 216, a second surface 218 opposite the firstsurface 216, and a plurality of first holes 220 a extending between thefirst and second surfaces 216 and 218. In the illustrated embodiment,however, the substrate 210 does not include a conductive layer, and thefirst dielectric layer 212 includes a fully cured material. Suitablesubstrates include Upilex®-based materials manufactured by UBEIndustries, Ltd. of Tokyo, Japan; Kapton or Microlux, both commerciallyavailable from E.I. du Pont de Nemours and Co. of Delaware, USA; andESPANEX, commercially available from Nippon Steel Chemical Co., Ltd. ofTokyo, Japan; and other dielectric materials.

The adhesive layer 224 is positioned on the second surface 218 of thesubstrate 210 for attaching the substrate 210 to a plurality ofsingulated dies. The adhesive layer 224 can be deposited onto thesubstrate 210 before or after constructing the first holes 220 a in thesubstrate 210. In either case, the adhesive layer 224 includes aplurality of second holes 220 b aligned with corresponding first holes220 a in the substrate 210. The first and second holes 220 a and 220 bform through holes 220 with a first dimension D₄ at the first surface216 of the dielectric layer 212 and a second dimension D₅ at theadhesive layer 224. In the illustrated embodiment, the first dimensionD₄ is approximately equal to the second dimension D₅; however, in otherembodiments, the first and second dimensions D₄ and D₅ can be different.In additional embodiments, the substrate 210 may further include aconductive layer on the dielectric layer 212.

FIG. 2B is a schematic side cross-sectional view of a microelectronicdevice assembly 200 in accordance with another embodiment of theinvention. The microelectronic device assembly 200 is generally similarto the microelectronic device assembly 100 described above withreference to FIGS. 1B-1E. For example, the illustrated assembly 200includes the substrate 210, a plurality of singulated dies 130 carriedby the substrate 210, and a redistribution structure formed at thesubstrate 210. In the illustrated assembly 200, however, the activesides 132 of the dies 130 are attached to the substrate 210 via theadhesive layer 224. Moreover, the illustrated redistribution structureincludes a plurality of conductive traces 244 electrically coupled tocorresponding terminals 136 and a plurality of contacts 146 formed oncorresponding conductive traces 244. The individual conductive traces244 include a first conductive layer 240 disposed in the holes 220 (FIG.2A) and on the first surface 216 of the substrate 210 and a secondconductive layer 242 formed on the first conductive layer 240. Theillustrated contacts 146 can be configured to receive electricalcouplers (e.g., solder balls) or the ends of individual wire-bonds. Theillustrated microelectronic device assembly 200 further includes anencapsulant 260 encasing the ends 135 and the back side 134 of theindividual dies 130. In other embodiments, the encapsulant 260 may notcover the back sides 134 and/or the entire ends 135 of the dies. Afterconstruction, the microelectronic device assembly 200 can be cut tosingulate a plurality of individual microelectronic devices 202(identified individually as 202 a-b).

FIGS. 3A and 3B illustrate stages in another embodiment of a method formanufacturing microelectronic devices. For example, FIG. 3A is aschematic side cross-sectional view of a substrate 310 and an adhesivelayer 224 on the substrate 310. The illustrated substrate 310 is apreformed multi-layer substrate and includes a dielectric material 312and a plurality of conductive traces 344 electrically isolated from eachother. The substrate 310 and the adhesive layer 224 further include aplurality of through holes 220 positioned such that each hole 220exposes a corresponding conductive trace 344. In several embodiments,the adhesive layer 224 may be a pre-preg material.

FIG. 3B is a schematic side cross-sectional view of a microelectronicdevice assembly 300 in accordance with another embodiment of theinvention. The illustrated assembly 300 is generally similar to theassembly 200 described above with reference to FIG. 2B. For example, theassembly 300 includes the substrate 310, a plurality of singulated dies130 carried by the substrate 310, and a redistribution structure formedat the substrate 310. The illustrated redistribution structure includesa plurality of conductive links 342 formed in corresponding holes 220(FIG. 3A) and electrically coupled to the associated conductive traces344. As such, the individual conductive traces 344 are electricallyconnected with corresponding terminals 136 on the dies 130. Theillustrated assembly 300 further includes a plurality of electricalcouplers 152 formed on corresponding conductive traces 344 and adielectric layer 350 (e.g., solder mask) formed on the substrate 310. Inother embodiments, the assembly 300 may not include the electricalcouplers 152, but rather wire-bonds may electrically couple theconductive traces 344 to corresponding external contacts.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thespirit and scope of the invention. For example, many of the elements ofone embodiment can be combined with other embodiments in addition to orin lieu of the elements of the other embodiments. Accordingly, theinvention is not limited except as by the appended claims.

1. A method for manufacturing a plurality of microelectronic devices,the method comprising: providing a substrate having a dielectric layer,a first conductive layer on a first side of the substrate, and aplurality of through holes arranged in arrays; attaching a plurality ofmicroelectronic dies to the substrate with an active side of theindividual dies facing toward the substrate and with a plurality ofterminals on the active side of the individual dies aligned withcorresponding through holes in the substrate, wherein the dies areattached to the substrate after forming the through holes in thesubstrate; placing conductive material in the through holes to form asecond conductive layer on the first conductive layer after attachingthe dies to the substrate, wherein the second conductive layer forms aredistribution structure; placing a third conductive layer on the secondconductive layer to form a redistribution layer; and removing sectionsof the redistribution layer, the first conductive layer, and the secondconductive layer to form conductive lines on the substrate.
 2. Themethod of claim 1 wherein the individual dies further comprise a backside opposite the active side and a plurality of ends extending betweenthe active side and the back side, and wherein the method furthercomprises: curing the substrate after attaching the dies to thesubstrate; and placing an encapsulant between adjacent dies to encase atleast a portion of the ends of the dies.
 3. The method of claim 1wherein providing the substrate comprises forming the through holes in apartially cured substrate.
 4. The method of claim 1 wherein providingthe substrate comprises forming the through holes in a pre-pregmaterial.
 5. The method of claim 1 wherein providing the substratecomprises removing a plurality of first sections of the conductive layerwith a first process and removing a plurality of second sections of thedielectric layer with a second process different than the first process.6. The method of claim 1 wherein providing the substrate comprisesremoving a plurality of first sections of the conductive layer with anetching process and removing a plurality of second sections of thedielectric layer with a different process.
 7. The method of claim 1wherein attaching the microelectronic dies to the substrate comprisescoupling singulated dies to the substrate without an adhesive positionedbetween the substrate and the dies.
 8. The method of claim 1, furthercomprising curing the substrate after attaching the dies to thesubstrate.
 9. The method of claim 1 wherein providing the substratecomprises laser drilling the through holes in the substrate.
 10. Themethod of claim 1 wherein providing the substrate comprises punching thesubstrate to construct the through holes.
 11. The method of claim 1wherein the individual dies further comprise a back side opposite theactive side and a plurality of ends extending between the active sideand the back side, and wherein the method further comprises:constructing a redistribution structure at the substrate, theredistribution structure including a plurality of conductive lineselectrically connected to corresponding terminals on the dies; andplacing an encapsulant between adjacent dies to encase at least aportion of the ends of the dies.
 12. The method of claim 1, furthercomprising: placing an adhesive layer on the substrate; and forming aplurality of holes in the adhesive layer such that the holes in theadhesive layer are aligned with corresponding holes in the substrate.13. The method of claim 1 wherein providing the substrate comprisesconstructing the through holes in the substrate such that the individualholes have a dimension less than a dimension of the individualterminals.
 14. A method for manufacturing a plurality of microelectronicdevices, the method comprising: providing a plurality of singulatedmicroelectronic dies and a substrate, the substrate comprising adielectric layer and a first conductive layer, the substrate having aplurality of holes arranged in arrays, the individual dies including anactive side and a plurality of terminals at the active side; couplingthe active sides of the singulated dies to the substrate such that theterminals are aligned with corresponding holes; forming a redistributionstructure on the first conductive layer after coupling the dies to thesubstrate, the redistribution structure including a plurality ofcontacts electrically coupled to the first conductive layer and tocorresponding terminals on the dies placing a third conductive layer onthe second conductive layer to form a redistribution layer; and removingsections of the redistribution layer, the first conductive layer, andthe second conductive layer to form conductive lines on the substrate.15. The method of claim 14 wherein forming the redistribution structurecomprises depositing a conductive layer in the holes.
 16. The method ofclaim 14 wherein: the substrate further comprises a first surface facingthe dies and a second surface opposite the first surface; and formingthe redistribution structure comprises placing a second conductive layerin the holes and onto at least a portion of the second surface of thesubstrate.
 17. The method of claim 14 wherein providing the substratewith the holes comprises forming the holes in the substrate beforecoupling the dies to the substrate.
 18. The method of claim 14 whereincoupling the dies to the substrate comprises attaching the dies to apartially cured substrate.
 19. The method of claim 14 wherein: theindividual dies further comprise a back side opposite the active sideand a plurality of ends extending between the active side and the backside; and coupling the dies to the substrate comprises attaching thedies to the substrate such that adjacent dies are spaced apart by a gapand at least a portion of the ends of the individual dies are exposed.20. A method for manufacturing a plurality of microelectronic devices,the method comprising: attaching a plurality of singulatedmicroelectronic dies to a partially cured substrate, the substrate has afirst side with a first conductive layer, a second side, and a pluralityof through apertures, wherein the plurality of singulatedmicroelectronic dies are attached to the second side with an active sideof the individual dies facing toward the substrate, and the individualdies include a plurality of terminals each aligned with a correspondingthrough apertures; curing the substrate after attaching the singulateddies; constructing a redistribution structure at the first side of thesubstrate, the redistribution structure including a plurality ofconductive lines electrically coupled to the first conductive layer andto corresponding terminals on the dies placing a third conductive layeron the second conductive layer to form a redistribution layer; andremoving sections of the redistribution layer, the first conductivelayer, and the second conductive layer to form conductive lines on thesubstrate.
 21. The method of claim 20 wherein attaching the dies to thesubstrate comprises coupling the dies to a substrate having preformedapertures.
 22. The method of claim 20 wherein attaching the dies to thesubstrate comprises coupling the dies to a pre-preg material.
 23. Themethod of claim 20 wherein attaching the singulated dies to thepartially cured substrate comprises coupling the dies to the substratewithout an adhesive positioned between the dies and the substrate. 24.The method of claim 20 wherein constructing the redistribution structurecomprises depositing a conductive material into the apertures.
 25. Amethod for manufacturing a microelectronic device, the methodcomprising: providing a substrate having a dielectric layer and a firstconductive layer; forming a plurality of through holes in the substratewith the holes arranged in arrays corresponding to at least one array ofterminals on a microelectronic component; forming a second conductivelayer in electrical connection with the first conductive layer and withat least one terminal on at least one microelectronic component attachedto the substrate wherein the second conductive layer forms aredistribution structure; placing a third conductive layer on the secondconductive layer to form a redistribution layer; and removing sectionsof the redistribution layer, the first conductive layer, and the secondconductive layer to form conductive lines on the substrate.
 26. Themethod of claim 25 wherein forming the holes in the substrate comprisesconstructing the holes in a partially cured substrate.
 27. The method ofclaim 25 wherein forming the holes in the substrate comprisesconstructing the holes in a pre-preg material.
 28. The method of claim25 wherein forming the holes in the substrate comprises at least one oflaser drilling or punching the substrate.
 29. A method for manufacturinga plurality of microelectronic devices, the method comprising: providinga plurality of dies each having an active side and a plurality ofterminals arranged in a terminal array at the active side; providing apreformed substrate separate from the dies, wherein the preformedsubstrate has a dielectric layer, a first conductive layer, and aplurality of through hole arrays, wherein individual through hole arrayshave a plurality of individual through holes arranged to correspond tothe terminals of a terminal array; attaching the microelectronic dies tothe substrate with the active side of individual dies facing toward thesubstrate and with individual terminals of individual dies aligned withcorresponding individual through holes in the substrate, wherein thedies are attached to the substrate after forming the through holes inthe substrate; placing conductive material in the through holes to forma second conductive layer on the first conductive layer after attachingthe dies to the substrate, wherein the second conductive layer forms aredistribution structure; placing a third conductive layer on the secondconductive layer to form a redistribution layer; and removing sectionsof the redistribution layer, the first conductive layer, and the secondconductive layer to form conductive lines on the substrate.